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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5101
DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 6 Emitter-base voltage Open collector Collector current 10 4 TC=25ae 80 150 -55~150 Base current Collector power dissipation Junction temperature Storage temperature
UNIT V V V A A W ae ae
1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=5 A;IB=0.5 A VCB=200V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 250 MIN 140 TYP.
2SC5101
SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB
MAX
UNIT V
0.5 10 10 180 |I |I
V A A
MHz pF
Switching times ton ts tf
hFE classifications O 50-100 P 70-140
TOR NDU ICO E SEM ANG INCH
Turn-on time Storage time 0.24 |I IC=5A;RL=12| IB1=-IB2=0.5A VCC=60V 4.32 Fall time 0.40 |I
s |I s s
Y 90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5101
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5101
TOR NDU ICO E SEM ANG INCH
4


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